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9972G G2SBA10 WP7113 SSF6JG COLTD LVCMOS25 E80CC1 265002
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  jmnic product specification silicon npn power transistors 2sc2438 description ? ? with to-220c package ? low collector saturation voltage ? high reliability applications ? switching regulators ? ultrasonic generators ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i b base current 2 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 2.5 ?? /w
jmnic product specification 2 silicon npn power transistors 2sc2438 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 80 v v (br)cbo collector-base breakdown voltage i c =100 | a ; i e =0 150 v v (br)ebo emitter-base breakdown voltage i e =100 | a ; i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.4a 0.5 v v besat base-emitter saturation voltage i c =4a; i b =0.4a 1.2 v i cbo collector cut-off current v cb =150v ;i e =0 100 | a i ebo emitter cut-off current v eb =7v; i c =0 100 | a h fe dc current gain i c =4 a ; v ce =1v 30 switching times t on turn-on time 0.5 | s t s storage time 2.5 | s t f fall time i c =4a; i b1 =0.4a i b2 =-0.4a;r l =5 |? 0.3 | s
jmnic product specification 3 silicon npn power transistors 2sc2438 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
jmnic product specification 4 silicon npn power transistors 2sc2438


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